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IDT70V657S12BF

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V657S12BFI

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

70V657S12BC

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V657S12BCG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V657S12BCG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V657S12BCGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V657S12BCGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V657S12BCI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V657S12BF

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V657S12BFG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號：

    IDT70V657S12BF

  • 功能描述：

    IC SRAM 1.125MBIT 12NS 208FBGA

  • RoHS：

    否

  • 類別：

    集成電路(IC) >> 存儲(chǔ)器

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    3,000

  • 系列：

    - 格式 -

  • 存儲(chǔ)器：

    EEPROMs - 串行

  • 存儲(chǔ)器類型：

    EEPROM

  • 存儲(chǔ)容量：

    8K(1K x 8)

  • 速度：

    400kHz

  • 接口：

    I²C，2 線串口

  • 電源電壓：

    1.7 V ~ 5.5 V

  • 工作溫度：

    -40°C ~ 85°C

  • 封裝/外殼：

    8-SOIC（0.154，3.90mm 寬）

  • 供應(yīng)商設(shè)備封裝：

    8-SOIC

  • 包裝：

    帶卷(TR)

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IDT
23+
208-CABGA(15x15)
73390
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!
 詢價(jià)
IDT
24+
BGA
46
詢價(jià)
ID
23+
BGA
5000
原裝正品,假一罰十
 詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IDT
22+23+
BGA
37878
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
IDT
22+
BGA
165323
原裝正品現(xiàn)貨,可開13個(gè)點(diǎn)稅
 詢價(jià)
IDT
24+
BGA
36200
全新原裝現(xiàn)貨/放心購買
 詢價(jià)
IDT
24+
208FBGA
2664
原裝現(xiàn)貨
 詢價(jià)
IDT
2447
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
IDT
22+
SOT-23
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!
 詢價(jià)
更多IDT70V657S12BF供應(yīng)商 更新時(shí)間2025-2-21 16:30:00

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