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首頁(yè) >IDT71V124SA12TYG>規(guī)格書列表

零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
71V124SA12PHG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12PHGI	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12TYG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12TYGI	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12YG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12YGI	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
IDT71V124SA12	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12PH	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12PHI	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12TY	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT

詳細(xì)參數(shù)

型號(hào)：
IDT71V124SA12TYG
功能描述：
IC SRAM 1MBIT 12NS 32SOJ
RoHS：
是
類別：
集成電路(IC) >> 存儲(chǔ)器
系列：
-
標(biāo)準(zhǔn)包裝：
2,500
系列：
- 格式 -
存儲(chǔ)器：
EEPROMs - 串行
存儲(chǔ)器類型：
EEPROM
存儲(chǔ)容量：
1K(128 x 8)
速度：
100kHz
接口：
UNI/O?（單線）
電源電壓：
1.8 V ~ 5.5 V
工作溫度：
-40°C ~ 85°C
封裝/外殼：
8-TSSOP，8-MSOP（0.118，3.00mm 寬）
供應(yīng)商設(shè)備封裝：
8-MSOP
包裝：
帶卷(TR)

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市宏捷佳電子科技有限公司	IDT71V124SA12TYG	IDT	2023+	SOJ	53500	正品,原裝現(xiàn)貨	詢價(jià)
深圳市昌和盛利電子有限公司	IDT71V124SA12TYG	IDT	23+	SOJ-32	9526		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IDT71V124SA12TYG	IDT	2016+	SOJ	6528	只做進(jìn)口原裝現(xiàn)貨!假一賠十!	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IDT71V124SA12TYG	IDT	23+	32-SOJ	71890	專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!	詢價(jià)
深圳市賽爾通科技有限公司	IDT71V124SA12TYG	IDT	23+	SOJ-32	65480		詢價(jià)
深圳市納艾斯科技有限公司	IDT71V124SA12TYG	IDT	2020+	SOJ	80000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
瀚佳科技(深圳)有限公司	IDT71V124SA12TYG	IDT	24+		65200		詢價(jià)
深圳市興燦科技有限公司	IDT71V124SA12TYG	IDT	24+	32SOJ	6188	原裝現(xiàn)貨	詢價(jià)
艾睿國(guó)際（香港）有限公司	IDT71V124SA12TYG	IDT	2447	SOJ32	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市杰順創(chuàng)科技有限公司	IDT71V124SA12TYG	IDT	19+	SOJ32	141	進(jìn)口原裝現(xiàn)貨	詢價(jià)

更多IDT71V124SA12TYG供應(yīng)商更新時(shí)間2025-2-20 17:45:00

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