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IDT71V65703S75BG

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65703S75BGI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDT

Integrated Device Technology, Inc.

71V65703S75BG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S75BGG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S75BQ

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S75BQG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S75PFG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S75PFGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65703S75BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65703S75BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號：

    IDT71V65703S75BG

  • 功能描述：

    IC SRAM 9MBIT 75NS 119BGA

  • RoHS：

    否

  • 類別：

    集成電路(IC) >> 存儲器

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    72

  • 系列：

    - 格式 -

  • 存儲器：

    RAM

  • 存儲器類型：

    SRAM - 同步

  • 存儲容量：

    9M（256K x 36）

  • 速度：

    75ns

  • 接口：

    并聯(lián)

  • 電源電壓：

    3.135 V ~ 3.465 V

  • 工作溫度：

    -40°C ~ 85°C

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商設(shè)備封裝：

    100-TQFP（14x14）

  • 包裝：

    托盤

  • 其它名稱：

    71V67703S75PFGI

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
06+
原廠原裝
4217
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IDT
23+
119BGA
9526
詢價
IDT
23+
119-PBGA(14x22)
9550
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
24+
BGA
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IDT
22+
BGA
5000
全新原裝現(xiàn)貨!自家?guī)齑?
 詢價
IDT
24+
119-BGA
7642
原裝現(xiàn)貨
 詢價
IDT
TQFP
488
原盒原包裝只有原裝假一罰十價優(yōu)!
 詢價
IDT
2022
BGA
28
原裝庫存特價銷售
 詢價
IDT
22+
119PBGA (14x22)
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IDT71V65703S75BG供應(yīng)商 更新時間2025-2-20 16:10:00

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