IGT60R190D1分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-單個規(guī)格書PDF中文資料

IGT60R190D1屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-單個。由英飛凌科技股份公司制造生產(chǎn)的IGT60R190D1晶體管 - FET，MOSFET - 單個分立式場效應(yīng)晶體管 (FET) 廣泛用于功率轉(zhuǎn)換、電機控制、固態(tài)照明及其他應(yīng)用，它們具有高頻開關(guān)特性，同時又能承載大電流，使其在這些應(yīng)用中具備一定優(yōu)勢。這類晶體管廣泛應(yīng)用于要求額定電壓為幾百伏或更低的應(yīng)用，如果超出該額定電壓值，則 IGBT 等其他器件更具競爭力。

Features

? Enhancement mode transistor – Normally OFF switch

? Ultra fast switching

? No reverse-recovery charge

? Capable of reverse conduction

? Low gate charge, low output charge

? Superior commutation ruggedness

? Qualified for industrial applications according to JEDEC

Standards (JESD47 and JESD22)

Benefits

? Improves system efficiency

? Improves power density

? Enables higher operating frequency

? System cost reduction savings

? Reduces EMI

Applications

Industrial, telecom, datacenter SMPS based on the half-bridge topology

(half-bridge topologies for hard and soft switching such as Totem pole PFC,

high frequency LLC).

For other applications: review CoolGaN? reliability white paper and contact

Infineon regional support