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IRF840

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRF840

N-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperationarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF840

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF840

N-ChannelPowerMOSFETs,8A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF840

8A,500V,0.850Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchin

Intersil

Intersil Corporation

IRF840

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

500Volt,0.85OhmHEXFETTO-220ABPlasticPackage TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancelineofpowerMOSFETtransistors.TheefficientgemmetryanduniqueprocessingofthislatestStateoftheArtdesignachieves:verylowon-stateresistancecombinedwithhight

IRF

International Rectifier

IRF840

TRANSISTORSN-CHANNEL

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSN-CHANNEL

IRF

International Rectifier

IRF840

PowerMOSFET(VDSS=500V,RDS(on)=0.85ohm,ID=8.0A)

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

IRF840

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

IRF840

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTAC

Suntac Electronic Corp.

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MODULE
1344+
132
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IMP
22+
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42341
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IMP
21+
DFN
10000
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IM
17+
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6200
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IM
2020+
SOT26
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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IM
1923+
SOT26
5000
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IM
23+
SOT26
50000
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INERGY/廣閎
23+
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9326
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IM
10+
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25000
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IM
22+
SOT26
25000
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