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IPB110N06L-G

OptiMOS? Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB110N06LG

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB110N06L-G

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N06L

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N06LG

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N06L-G

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXFK110N06

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching

IXYS

IXYS Corporation

IXFK110N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=110A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

TSM110N06

55VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

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8000
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24+
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INFINE0N
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更多IPB110N06L G供應(yīng)商 更新時(shí)間2025-5-27 15:01:00