首頁(yè) >IPB60R380P6>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IPB60R380P6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevice | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPB60R380P6 | Marking:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
IPB60R380P6 | Material Content Data Sheet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Material Content Data Sheet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevice | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
22+ |
TO-263 |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-263 |
5590 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-263 |
6000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
INFNEON |
22+ |
TO263 |
50000 |
只做正品原裝,假一罰十,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
INFNEON |
16+ |
TO263 |
2281 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
22+ |
TO-263 |
14100 |
原裝正品 |
詢(xún)價(jià) | ||
INFNEON |
24+ |
TO263 |
10000 |
全新原裝現(xiàn)貨庫(kù)存 |
詢(xún)價(jià) | ||
INFNEON |
22+ |
TO263 |
21000 |
原廠原包裝。假一罰十??砷_(kāi)13%增值稅發(fā)票。 |
詢(xún)價(jià) | ||
INFINEON |
24+ |
TO-220 |
5000 |
十年沉淀唯有原裝 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-263 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢(xún)價(jià) |
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