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IPB60R380P6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevice

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R380P6

Marking:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPB60R380P6

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R380P6_15

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD60R380P6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIPP60R380P6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPA60R380P6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPA60R380P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R380P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevice

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R380P6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
22+
TO-263
6000
十年配單,只做原裝
詢(xún)價(jià)
INFINEON/英飛凌
21+
TO-263
5590
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢(xún)價(jià)
INFINEON/英飛凌
23+
TO-263
6000
原裝正品,支持實(shí)單
詢(xún)價(jià)
INFNEON
22+
TO263
50000
只做正品原裝,假一罰十,歡迎咨詢(xún)
詢(xún)價(jià)
INFNEON
16+
TO263
2281
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
詢(xún)價(jià)
INFINEON/英飛凌
22+
TO-263
14100
原裝正品
詢(xún)價(jià)
INFNEON
24+
TO263
10000
全新原裝現(xiàn)貨庫(kù)存
詢(xún)價(jià)
INFNEON
22+
TO263
21000
原廠原包裝。假一罰十??砷_(kāi)13%增值稅發(fā)票。
詢(xún)價(jià)
INFINEON
24+
TO-220
5000
十年沉淀唯有原裝
詢(xún)價(jià)
INFINEON/英飛凌
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢(xún)價(jià)
更多IPB60R380P6供應(yīng)商 更新時(shí)間2025-2-14 14:02:00