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IRFF120

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRFF120

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

Description TheHEXFET?technologyisthekeytoInternationalRectifier’sHiReladvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance. TheHEXFE

IRF

International Rectifier

IRFF120

N-ChannelEnhancement-ModePowerMOSField-EffectTransistors

5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

IRFF120

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFM120A

IEEE802.3afCompatible

IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFM120A

AvalancheRuggedTechnology

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)

KERSEMI

Kersemi Electronic Co., Ltd.

IRFM120A

AvalancheRuggedTechnology

IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFM120A

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFM120A

AdvancedPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

IRFM120ATF

AvalancheRuggedTechnology

IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Advantech
22+
NA
6878
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
TI/德州儀器
23+
QFP
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
A
24+
b
4
詢價
HYNIX
24+
HSOP-3.9-7P
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價
IPC
NA
8560
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
HYNIX
19+
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
HYNIX
20+
SOP-3.9-7P
2960
誠信交易大量庫存現(xiàn)貨
 詢價
HYNIX
23+
SOP7
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多IPC-120供應(yīng)商 更新時間2025-4-8 10:08:00

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