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IPDQ60T010S7中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IPDQ60T010S7
廠商型號(hào)

IPDQ60T010S7

功能描述

MOSFET 600V CoolMOSa SJ S7A Power Device

絲印標(biāo)識(shí)

60I010S7

封裝外殼

PG-HDSOP-22

文件大小

1.28795 Mbytes

頁(yè)面數(shù)量

15 頁(yè)

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡(jiǎn)稱

Infineon英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-19 17:37:00

IPDQ60T010S7規(guī)格書(shū)詳情

Features

? Optimized price performance in low-frequency switching applications

? High pulse current capability

? Seamless diagnostics at the lowest system cost

? Temperature sense feature for protection and optimized thermal device

utilization cost

Benefits

? Reduction of external sensing elements, hence a more compact design

compared to electromechanical devices

? Increased system performance

? Minimized conduction losses (eliminate/reduce heat sink)

? Increased system performance

? More compact and more straightforward design

? Lower BOM or/and TCO over a prolonged lifetime

? More reliability and longer system lifetime

Potential applications

? Solid state relays and circuit breakers (PLC, Energy storage)

? Line rectification in high power/performance applications (Computing,

Telecom, UPS and Solar)

Product validation

Fully qualified according to JEDEC for Industrial Applications

Please note: The source and sense source pins are not exchangeable.

Their exchange might lead to malfunction. For paralleling 4pin MOSFET

devices the placement of the gate resistor is generally recommended to be

on the Driver Source instead of the Gate.

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