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IIPA037N08N3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Deviceforuseinawidevarietyofapplications ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)≤3.7m?(max) ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP037N08N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA037N08N3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Deviceforuseinawidevarietyofapplications ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)≤3.7m?(max) ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA037N08N3G

OptiMOS(TM)3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA037N08N3G

OptiMOS(TM)3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB037N08N3G

OptiMOS3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI037N08N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI037N08N3G

OptiMOS3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP037N08N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP037N08N3G

OptiMOS3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    IPI037N08N3 G

  • 功能描述：

    MOSFET N-KANAL POWER MOS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
TO-262
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
NEXPERIA/安世
23+
SOT763-1
69820
終端可以免費供樣,支持BOM配單!
 詢價
INFINEON
23+
TO-262
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
INFINEON
23+
TO-262
25000
英飛凌MOS管全系列在售,終端可供樣品
 詢價
INFINEON
23+
TO-262
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
I2PAK TO-262
7000
詢價
INFINEON
23+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
INFINEON
1503+
TO262-3
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IPI037N08N3 G供應(yīng)商 更新時間2025-5-29 14:22:00

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