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IPP110N06L-G

OptiMOS? Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

110N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

G110N06K

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G110N06KA

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G110N06T

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G110N06TA

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06TAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT110N06M

N-ChannelEnhancementModePowerMOSFET

Description TheGT110N06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT110N06S

N-ChannelEnhancementModePowerMOSFET

Description TheGT110N06Susesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT110N06SH

N-ChannelEnhancementModePowerMOSFET

Description TheGT110N06SHusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
INFINEON
23+
7000
詢(xún)價(jià)
INFN
25+23+
TO220
47536
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
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INFN
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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INFN
21+
TO220
10000
原裝現(xiàn)貨假一罰十
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INFINEON
TO-220
22+
6000
十年配單,只做原裝
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INFINEON
23+
TO-220
6000
原裝正品，支持實(shí)單
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INFINE0N
1049+
TO220
20
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
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Infineon/英飛凌
24+
20000
全新、原裝、現(xiàn)貨
 詢(xún)價(jià)
INFINE0N
23+
TO220
12800
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
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更多IPP110N06L G供應(yīng)商 更新時(shí)間2025-5-24 15:01:00

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