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IRFP440PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastS

IRF

International Rectifier

IRFP440PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP440R

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS440

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS440

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.85Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS440A

AdvancedPowreMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=500V ?LowerRDS(ON):0.638?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS440A

iscSiliconNPNPowerTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS440B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFY440

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY440

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IPT440

  • 功能描述:

    TRIAC|400V V(DRM)|40A I(T)RMS|PRESS-19

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INFINEON
23+
2
原裝正品現(xiàn)貨,德為本,正為先,通天下!
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ICE
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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Infineon
24+
8-PowerSFN
25454
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Infineon(英飛凌)
2447
PG-HSOF-8
115000
2000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
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INFINEON/英飛凌
23+
H-PSOF-8-1
50000
全新原裝正品現(xiàn)貨,支持訂貨
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Infineon/英飛凌
2021+
PG-HSOF-8
9600
原裝現(xiàn)貨,歡迎詢價(jià)
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Infineon/英飛凌
24+
PG-HSOF-8
6000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
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Infineon/英飛凌
24+
PG-HSOF-8
30000
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Infineon/英飛凌
21+
PG-HSOF-8
6820
只做原裝,質(zhì)量保證
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Infineon/英飛凌
21+
PG-HSOF-8
13880
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更多IPT440供應(yīng)商 更新時(shí)間2025-4-10 10:03:00