IR01H224-P2中文資料IRF數據手冊PDF規(guī)格書

Description

The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use.

Features

? Output Power MOSFETs in half-bridge configuration

? 500V rated breakdown voltage

? High side gate drive designed for bootstrap operation

? Matched propagation delay for both channels

? Undervoltage lockout

? 5V Schmitt-triggered input logic

? Half-Bridge output in phase with HIN

? Heatsink version (P2) with improved PD