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IRC830PBF

Dynamic dv/df Rating

IRF

International Rectifier

IRF830

N-CHANNEL500V-1.35ohm-4.5A-TO-220PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=1.35? ■EXTREMELYHIGHdv/dtCAPABILITY ■1

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF830

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES ?Repe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF830

N-CHANNELENHANCEMENTMODE

PowerFieldEffectTransistor N?ChannelEnhancementMode ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn?Losses,SpecifiedatElevated Temperature ?Rugged—SOAisPowerDissipationLimited ?Source?to?DrainDiodeCharacterizedforUsewithInductiveLoads

TRSYS

Transys Electronics

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF830

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF830

POWERMOSFET

ETCList of Unclassifed Manufacturers

未分類制造商

IRF830

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

IRF830

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconv

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRC830PBF

  • 功能描述：

    MOSFET N-Chan 500V 4.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
25+23+
TO220
48469
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
21+
TO220
12588
原裝正品,自己庫(kù)存 假一罰十
 詢價(jià)
VISHAY
1503+
TO220-5
3000
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
21+
TO220
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
Vishay Siliconix
22+
TO2205
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IR/Vishay
23+
TO-220-5
6000
原裝正品，支持實(shí)單
 詢價(jià)
IR
06+
TO220
300
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
IR
TO-220
68500
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
INFINEON/英飛凌
2023+
TO-220
4800
原廠全新正品旗艦店優(yōu)勢(shì)現(xiàn)貨
 詢價(jià)
更多IRC830PBF供應(yīng)商 更新時(shí)間2025-5-23 16:50:00

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