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零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRF300P226

StrongIRFET?

Applications ?UPSandInverterapplications ?Half-bridgeandfull-bridgetopologies ?Resonantmodepowersupplies ?DC/DCandAC/DCconverters ?OR-ingandredundantpowerswitches ?BrushedandBLDCMotordriveapplications ?Batterypoweredcircuits Benefits ?ImprovedGate,Avalan

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF320

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF320

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. ?LowRDs(on) ?VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF320

N-CHANNEL POWER MOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF320-323

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. ?LowRDs(on) ?VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthe

IRF

International Rectifier

IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS=55V RDS(on)=8.0m? ID=110A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRF

International Rectifier

IRF3205L

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS=55V RDS(on)=8.0m? ID=110A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRF

International Rectifier

IRF3205PBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF3205S

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS=55V RDS(on)=8.0m? ID=110A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
7000
詢價(jià)
IR
16+
TO-254
160
全新原裝 研究所指定供貨商
 詢價(jià)
TI
23+
6000
現(xiàn)貨 有價(jià)可談
 詢價(jià)
長電
2015
TO-220-3L
40
詢價(jià)
INFINEON
21+
SOP-8
10000
詢價(jià)
IR
2023+
TO263
5800
進(jìn)口原裝,現(xiàn)貨熱賣
 詢價(jià)
IR
23+
TO263
10089
優(yōu)勢 /原裝現(xiàn)貨長期供應(yīng)現(xiàn)貨支持
 詢價(jià)
更多IRF供應(yīng)商 更新時(shí)間2025-4-23 14:00:00

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