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IRF342

N-CHANNEL POWER MOSFETS

N-ChannelPowerMOSFETs

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF342

isc N-Channel MOSFET Transistor

DESCRIPTION ?VGSRatedat±20V ?SiliconGateforFastSwitchingSpeeds ?IDSS,VDS(on),SOAandVGS(th)specifiedatElevatedtemperature ?Rugged APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcont

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF343

isc N-Channel MOSFET Transistor

DESCRIPTION ?VGSRatedat±20V ?SiliconGateforFastSwitchingSpeeds ?IDSS,VDS(on),SOAandVGS(th)specifiedatElevatedtemperature ?Rugged APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcont

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF343

N-CHANNEL POWER MOSFETS

N-ChannelPowerMOSFETs

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF343

N-Channel Power MOSFETs, 10A, 350V/400V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF350

N-Channel Power MOSFETs, 15A, 350V/400V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF350

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. They

Intersil

Intersil Corporation

IRF350

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi

IRF

International Rectifier

IRF350

N-CHANNEL POWER MOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF350-353

N-Channel Power MOSFETs, 15A, 350V/400V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
7000
詢價(jià)
IRF
24+
SOP-8P
400
現(xiàn)貨
 詢價(jià)
IR
19+
TO-220
75120
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
IR
2016+
SOT-163
18070
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
Fairchi
24+
DXPAK
6000
進(jìn)口原裝正品假一賠十,貨期7-10天
 詢價(jià)
IOR
25+
SOP8
3000
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!
 詢價(jià)
IR
2015+
D-Pak
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢價(jià)
更多IRF供應(yīng)商 更新時(shí)間2025-4-23 14:00:00

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