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IRF1310NS

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NS

Fully Avalanche Rated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NS

Marking：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310NSPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NSPBF

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF1310NSPBF_15

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF1310NSTRLPBF

Advanced Process Technology

IRF

International Rectifier

IRF1310S

PowerMOSFET(Vdss=100V,Rds(on)=0.04ohm,Id=41A)

VDSS=100V RDS(on)=0.04? ID=41A Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatH

IRF

International Rectifier

IRFI1310G

PowerMOSFET(Vdss=100V,Rds(on)=0.04ohm,Id=22A)

VDSS=100V RDS(on)=0.04? ID=22A Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatH

IRF

International Rectifier

IRFI1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=24A)

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF1310NS

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
24+
TO-263
501253
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
13+
TO-263
9168
原裝分銷
 詢價(jià)
IR
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
TO263
7750
全新原裝優(yōu)勢
 詢價(jià)
IR
24+
TO263
7399
詢價(jià)
IR
2020+
TO-263
600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價(jià)
更多IRF1310NS供應(yīng)商 更新時(shí)間2025-5-23 17:06:00

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