IRF221中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
IRF221 |
| 功能描述 | Nanosecond Switching Speeds |
| 文件大小 |
135.19 Kbytes |
| 頁面數(shù)量 |
3 頁 |
| 生產(chǎn)廠商 | New Jersey Semi-Conductor Products, Inc. |
| 企業(yè)簡稱 |
NJSEMI【新澤西半導(dǎo)體】 |
| 中文名稱 | 新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-5-19 8:50:00 |
| 人工找貨 | IRF221價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
IRF221規(guī)格書詳情
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 4.0A and 5.0A, 150V and 200V
? rDS(ON) = 0.8Ω and 1.2￡i
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Majority Carrier Device
產(chǎn)品屬性
- 型號(hào)：
IRF221
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
07+ |
TO-3 |
8 |
只有原裝正品,老板發(fā)話合適就出 |
詢價(jià) | ||
IR |
23+ |
TO-3 |
7000 |
詢價(jià) | |||
IOR |
21+ |
DIP |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
24+ |
TO-3 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
NA/ |
10 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
IR |
25+23+ |
TO-220 |
26069 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
25+ |
TO-3 |
54648 |
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià) |
詢價(jià) | ||
IR |
2015+ |
TO-3(鐵帽) |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
24+ |
TO-3 |
10000 |
詢價(jià) | |||
IRF223 |
80 |
80 |
詢價(jià) |
