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IRF2N60-126中文資料SUNTAC數(shù)據(jù)手冊PDF規(guī)格書
IRF2N60-126規(guī)格書詳情
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
產品屬性
- 型號：
IRF2N60-126
- 制造商：
SUNTAC
- 制造商全稱：
SUNTAC
- 功能描述：
POWER MOSFET
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SSOP-8 |
8238 |
詢價 | |||
QUALCOMM |
20+ |
QFP-48 |
500 |
樣品可出,優(yōu)勢庫存歡迎實單 |
詢價 | ||
IOR |
24+ |
QFP-48 |
20 |
詢價 | |||
IOR |
21+ |
SOP-8 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
QUALCOM |
24+ |
TQFP48 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
I |
22+ |
TO-220 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
IR |
23+ |
TO-TO-220 |
7000 |
詢價 | |||
I |
TO-220 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
IOR |
23+ |
QFP-48 |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 |
