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IRF3711ZS

HEXFET Power MOSFET

Applications ?HighFrequencySynchronousBuckConvertersforComputerProcessorPower Benefits ?LowRDS(on)at4.5VVGS ?Ultra-LowGateImpedance ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRF3711ZSPBF

HEXFET Power MOSFET

Applications ?HighFrequencySynchronousBuckConvertersforComputerProcessorPower ?Lead-Free Benefits ?LowRDS(on)at4.5VVGS ?Ultra-LowGateImpedance ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFR3711

N-ChannelMOSFETTransistor

?DESCRITION ?HighFrequencyBuckConvertersForServerProcessorPowerSynchronousFET ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤6.5m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3711

PowerMOSFET(Vdss=20V,Rds(on)max=6.5mohm,Id=110A??

Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse ●HighFrequencyBuckConvertersforServerProcessorP

IRF

International Rectifier

IRFR3711PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFR3711PBF

HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse

IRF

International Rectifier

IRFR3711TRPBF

HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse

IRF

International Rectifier

IRFR3711Z

HEXFETPowerMOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom

IRF

International Rectifier

IRFR3711Z

N-ChannelMOSFETTransistor

?DESCRITION ?HighFrequencySynchronousBuckConvertersForComputerProcessorPower ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤5.7m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3711Z

HighFrequencySynchronousBuckConvertersforComputerProcessorPower

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRF3711ZS

  • 功能描述：

    MOSFET N-CH 20V 92A D2PAK

  • RoHS：

    否

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    HEXFET®

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
TO-263
9450
原裝正品，實(shí)單請聯(lián)系
 詢價
IR
17+
D2-Pak
31518
原裝正品 可含稅交易
 詢價
IR
24+
D2-Pak
8866
詢價
IR
23+
TO-263
35890
詢價
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
 詢價
IR
1816+
435
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
24+
TO-263
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理
 詢價
IR
18+
TO263
12500
全新原裝正品,本司專業(yè)配單,大單小單都配
 詢價
更多IRF3711ZS供應(yīng)商 更新時間2025-3-20 13:58:00

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