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IRF421中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF421
廠商型號(hào)

IRF421

功能描述

2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

文件大小

142.02 Kbytes

頁(yè)面數(shù)量

3 頁(yè)

生產(chǎn)廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡(jiǎn)稱(chēng)

NJSEMI新澤西半導(dǎo)體

中文名稱(chēng)

新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-6 11:35:00

人工找貨

IRF421價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

IRF421規(guī)格書(shū)詳情

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 2.2A and 2.5A, 450V and 500V

? rDS(ON)= 3-Ofi and 4.0Ω

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Majority Carrier Device

? Related Literature

產(chǎn)品屬性

  • 型號(hào):

    IRF421

  • 制造商:

    International Rectifier

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IR(國(guó)際整流器)
24+
NA/
8735
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IR
23+
TO-3
56140
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IR/MOT
專(zhuān)業(yè)鐵帽
TO-3
67500
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ISC/固電
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10000
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FAIRCHILD
23+
NA
19960
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IR
12+
TO-263
15000
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IR
23+
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6000
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IR
23+
TO-3
8000
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IR
24+
TO-3
10000
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INFINEON
25+
TO-220
5000
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