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IRF520_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL520_V01

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

LNK520_V01

EnergyEfficient,CVorCV/CCSwitcherforVeryLowCostChargersandAdapters

CostEffectiveLinear/RCCReplacement ?Lowestcostandcomponentcount,constantvoltage(CV) orconstantvoltage/constantcurrent(CV/CC)solutions ?Optimizedforbiaswindingfeedback ?Upto75lighterpowersupplyreducesshippingcost ?PrimarybasedCV/CCsolutioneliminates10to20

POWERINTPower Integrations, Inc.

荷蘭帕沃英蒂格盛有限公司

MBR520_V01

SCHOTTKYBARRIERRECTIFIER

FEATURES Metal-semiconductorjunctionwithguardring Epitaxialconstruction Lowforwardvoltagedrop,lowswitchinglosses Highsurgecapability Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications TheplasticmaterialcarriesU/Lrecognition94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽(yáng)電子三陽(yáng)電子有限公司

SB520_V01

SCHOTTKYBARRIERRECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 260C/10seconds,0.375”(9.5mm)leadl

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

SB520_V01

SchottkyBarrierRectifiers

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

SB520_V01

SchottkyBarrierRectifier

FEATURES ?Guardringforovervoltageprotection ?Extremelyfastswitching ?Lowforwardvoltagedrop ?Highforwardsurgecapability ?Highfrequencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSdirective2002/95/ECandin accordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SB520_V01

SCHOTTKYBARRIERRECTIFIER

FEATURES Metal-semiconductorjunctionwithguardring Epitaxialconstruction Lowforwardvoltagedrop,lowswitchinglosses Highsurgecapability Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications TheplasticmaterialcarriesU/Lrecognition94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽(yáng)電子三陽(yáng)電子有限公司

SB520_V01

5.0ASCHOTTKYBARRIERDIODE

SchottkyBarrierChip GuardRingforTransientandESDProtection SurgeOverloadRatingto150APeak LowPowerLoss,HighEfficiency IdeallySuitedforUseinHighFrequency SMPS,InvertersandAsFreeWheelingDiodes

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

SIHL520_V01

PowerMOSFET

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?Logic-LevelGateDrive ?RDS(on)SpecifiedatVGS=4Vand5V ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfrom

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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IR
22+
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IR
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8000
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IR
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IR
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IR
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50000
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IR
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5000
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NA
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原裝G
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IR
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FAIRCHILD
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9526
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更多IRF520_V01供應(yīng)商 更新時(shí)間2025-3-19 14:00:00

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