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IRF530NLPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF530NLPBF
廠商型號(hào)

IRF530NLPBF

功能描述

Advanced Process Technology

文件大小

876.19 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-2-20 22:50:00

IRF530NLPBF規(guī)格書詳情

Description

Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Fully Avalanche Rated

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRF530NLPBF

  • 制造商:

    International Rectifier

  • 功能描述:

    MOSFET, 100V, 17A, 90 MOHM, 24.7 NC QG, TO-262

  • 功能描述:

    Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-262

  • 功能描述:

    TRANS MOSFET N-CH 100V 17A 3PIN TO-262 - Rail/Tube

  • 功能描述:

    MOSFET N-CH 100V 17A TO-262

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