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IRF530STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導體

IRF530STRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF530STRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導體

IRF530STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI530A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFI530A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFI530G

HEXFETPOWERMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI530G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導體

IRFI530G

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFI530G

SinktoLeadCreepageDistance=4.8mm

DESCRIPTION TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplications.Themoldingcompoundusedprovidesahighisolationcapabilityandalowthermalresistancebetweenthetabandexternalheatsink.Thisisolationisequivalenttousinga1

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    IRF530STRLPBF

  • 功能描述：

    MOSFET N-Chan 100V 14 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
D2PAK(TO-263)
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IR
24+
TO-263
1600
只做原廠渠道 可追溯貨源
 詢價
VISHAY(威世)
24+
TO-263
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
NA
19+
74562
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
IR
18+
TO263
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
威世
21+
TO-263
12588
原裝正品,自己庫存
 詢價
IR
15+
TO-263
1600
現(xiàn)貨
 詢價
IR/VISHAY
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價
VISHAY
1809+
TO-263
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多IRF530STRLPBF供應商 更新時間2025-5-19 11:11:00

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