IRF630中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRF630規(guī)格書詳情
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 9A, 200V
? rDS(ON) = 0.400?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產品屬性
- 型號：
IRF630
- 功能描述：
MOSFET N-Ch 200 Volt 10 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST(意法半導體) |
24+ |
TO220 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
ST/意法 |
24+ |
NA/ |
50 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
HARRIS |
2016+ |
TO-220 |
3500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ON |
23+ |
DIP-16 |
6500 |
全新原裝假一賠十 |
詢價 | ||
IR |
三年內 |
1983 |
只做原裝正品 |
詢價 | |||
ST/意法 |
2023+ |
TO220 |
1000 |
專注全新正品,優(yōu)勢現(xiàn)貨供應 |
詢價 | ||
IR |
23+ |
TO-220 |
18689 |
詢價 | |||
IR |
24+ |
TO 220 |
161449 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
FSC |
1926+ |
TO-220 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
ST/意法 |
25+ |
TO220-3 |
65428 |
百分百原裝現(xiàn)貨 實單必成 |
詢價 |
