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IRF630中文資料尼爾半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF630
廠商型號(hào)

IRF630

功能描述

N-Channel Power MOSFET

文件大小

620.22 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 Nell Semiconductor Co., Ltd
企業(yè)簡(jiǎn)稱(chēng)

NELLSEMI尼爾半導(dǎo)體

中文名稱(chēng)

尼爾半導(dǎo)體股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-5 13:30:00

人工找貨

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IRF630規(guī)格書(shū)詳情

DESCRIPTION

The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.

They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.

They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These transistors can be operated directly from integrated circuits.

FEATURES

● RDS(ON) = 0.40? @ VGS = 10V

● Ultra low gate charge(43nC max.)

● Low reverse transfer capacitance

(CRSS = 80pF typical)

● Fast switching capability

● 100 avalanche energy specified

● Improved dv/dt capability

● 150°C operation temperature

產(chǎn)品屬性

  • 型號(hào):

    IRF630

  • 功能描述:

    MOSFET N-Ch 200 Volt 10 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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