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IRF6613TRPBF規(guī)格書詳情
Description
The IRF6613PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHS Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產品屬性
- 型號：
IRF6613TRPBF
- 功能描述：
MOSFET 40V N-CH HEXFET 3.4mOhms 42nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
DIRECTFET |
26391 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
24+ |
N/A |
65000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
IR |
23+ |
DIRECTFET |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
Infineon(英飛凌) |
2447 |
MG-WDSON-5 |
115000 |
4800個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
IR |
23+ |
SOIC |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
2318+ |
SOIC |
4852 |
十年專業(yè)專注 優(yōu)勢渠道商正品保證公司現(xiàn)貨 |
詢價 | ||
IR |
24+ |
SOIC |
18500 |
授權代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售 |
詢價 | ||
IR |
24+ |
DirectFETtradeMT |
7500 |
詢價 | |||
INFINEON |
24+ |
MG-WDSON-5 |
39500 |
進口原裝現(xiàn)貨 支持實單價優(yōu) |
詢價 | ||
Infineon/英飛凌 |
24+ |
MG-WDSON-5 |
10000 |
全新原裝現(xiàn)貨 |
詢價 |
