首頁>IRF6618TR1>規(guī)格書詳情
IRF6618TR1中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6618TR1規(guī)格書詳情
Description
The IRF6623 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? Low Switching Losses
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with Existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6618TR1
- 功能描述：
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
QFN |
11000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
24+ |
SMD |
35200 |
一級代理/放心采購 |
詢價 | ||
IR |
24+ |
SMD |
4000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
2013+ |
QFN |
15800 |
授權(quán)分銷IR系列場效應管，大量現(xiàn)貨供應IRF6617TRPBF，正品原裝，品質(zhì)保證。 |
詢價 | ||
IR |
23+ |
NA/ |
4000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
2447 |
DirectFETMT |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IR |
1923+ |
NA |
35689 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
IR |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
