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IRF710

2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF710

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710

N-Channel Power MOSFETs, 2.25A, 350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF710

N-Channel Power MOSFETs, 2.25 A, 350-400 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF710

IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF710

N-Channel Mosfet Transistor

·DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF710

N-Channel Power MOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF710

Power MOSFET FEATURES

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF7101

HEXFET Power MOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent ●20VVGSMax.GateRating ●100testedforRg Applications ●SynchronousMOSFETforNotebookProcessorPower ●SynchronousRectifierMOSFETforIsolatedDC-DCConverters

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    IRF710

  • 功能描述:

    MOSFET N-Chan 400V 2.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2015+
TO-220
19889
一級代理原裝現(xiàn)貨,特價熱賣!
詢價
IR
1995
26
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
IR
23+
TO-220
19526
詢價
IR
2020+
TO-220
22
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
IR
06+
TO-220
8000
原裝庫存
詢價
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
詢價
SEC
23+
34-PCM
5000
原裝正品,假一罰十
詢價
VISHAY/IR
24+
原廠封裝
550
原裝現(xiàn)貨假一罰十
詢價
IOR
23+
TO-
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價
IR
24+
原裝
6980
原裝現(xiàn)貨,可開13%稅票
詢價
更多IRF710供應(yīng)商 更新時間2025-2-12 9:00:00