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IRF7301PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF7301PBF
廠商型號(hào)

IRF7301PBF

功能描述

HEXFET Power MOSFET

文件大小

237.6 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-27 23:01:00

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IRF7301PBF規(guī)格書詳情

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

● Generation V Technology

● Ultra Low On-Resistance

● Dual N-Channel Mosfet

● Surface Mount

● Available in Tape & Reel

● Dynamic dv/dt Rating

● Fast Switching

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRF7301PBF

  • 功能描述:

    MOSFET 20V DUAL N-CH HEXFET 50mOhms 13.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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