首頁>IRF737LCPBF>規(guī)格書詳情
IRF737LCPBF中文資料IRF數據手冊PDF規(guī)格書
IRF737LCPBF規(guī)格書詳情
Description
This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven ruggedness and reliability that are characteristics of HEXFETs offer the designer a new standard in power transistors for switching applications.
● Reduced Gate Drive Requirement
● Enhanced 30V VGS Rating
● Reduced CISS, COSS, CRSS
● Extremely High Frequency Operation
● Repetitive Avalanche Rated
● Lead-Free
產品屬性
- 型號：
IRF737LCPBF
- 功能描述：
MOSFET N-Chan 300V 6.1 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
05+ |
原廠原裝 |
101 |
只做全新原裝真實現貨供應 |
詢價 | ||
IR |
19+ |
TO-220 |
25 |
原裝 |
詢價 | ||
IOR |
24+ |
SOP8 |
3200 |
絕對原裝自家現貨!真實庫存!歡迎來電! |
詢價 | ||
原裝正品 |
23+ |
TO-263 |
67067 |
##公司主營品牌長期供應100%原裝現貨可含稅提供技術 |
詢價 | ||
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
VishayIR |
24+ |
TO-220AB |
276 |
詢價 | |||
IR |
24+ |
NA/ |
4357 |
原裝現貨,當天可交貨,原型號開票 |
詢價 | ||
ST |
21+ |
TO-220 |
23480 |
詢價 | |||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原廠渠道,現貨配單 |
詢價 | ||
IR |
23+24 |
SOT263 |
16805 |
專業(yè)經營各種場效應管、三極管、IGBT、可控硅、穩(wěn)壓IC |
詢價 |
