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IRF737LCPBF中文資料IRF數據手冊PDF規(guī)格書

IRF737LCPBF
廠商型號

IRF737LCPBF

功能描述

HEXFET Power MOSFET

文件大小

228.99 Kbytes

頁面數量

8

生產廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網

原廠標識
數據手冊

下載地址一下載地址二到原廠下載

更新時間

2025-5-29 11:11:00

人工找貨

IRF737LCPBF價格和庫存,歡迎聯系客服免費人工找貨

IRF737LCPBF規(guī)格書詳情

Description

This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs.

These device improvements combined with the proven ruggedness and reliability that are characteristics of HEXFETs offer the designer a new standard in power transistors for switching applications.

● Reduced Gate Drive Requirement

● Enhanced 30V VGS Rating

● Reduced CISS, COSS, CRSS

● Extremely High Frequency Operation

● Repetitive Avalanche Rated

● Lead-Free

產品屬性

  • 型號:

    IRF737LCPBF

  • 功能描述:

    MOSFET N-Chan 300V 6.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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