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IRF840LC中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRF840LC
廠商型號

IRF840LC

功能描述

Power MOSFET

文件大小

1.51385 Mbytes

頁面數(shù)量

8

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-12 14:14:00

IRF840LC規(guī)格書詳情

DESCRIPTION

This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs.

These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications.

FEATURES

? Ultra Low Gate Charge

? Reduced Gate Drive Requirement

? Enhanced 30 V VGS Rating

? Reduced Ciss, Coss, Crss

? Extremely High Frequency Operation

? Repetitive Avalanche Rated

? Compliant to RoHS Directive 2002/95/EC

產(chǎn)品屬性

  • 型號:

    IRF840LC

  • 功能描述:

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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na
65790
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IR/VISHAY
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TO-262
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24+
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