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IRF9630

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9630

Power MOSFETS

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9630

6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF9630

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9630

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9630

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9630

SEMICONDUCTORS

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etc未分類制造商etc2未分類制造商

IRF9630

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

IRF

International Rectifier

IRF9630_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9630PBF

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF9630

  • 功能描述：

    MOSFET P-Chan 200V 6.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
TO-220
100
只做原廠渠道 可追溯貨源
 詢價(jià)
IR
24+
TO 220
161181
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
24+/25+
79
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
IOR
07PB
TO220/
2360
全新原裝進(jìn)口自己庫存優(yōu)勢(shì)
 詢價(jià)
IR
06+
TO-220
8000
自己公司全新庫存絕對(duì)有貨
 詢價(jià)
IR/FSC
17+
TO-220
6200
詢價(jià)
IR
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
TO-220
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
IR
23+
TO-220
9896
詢價(jià)
更多IRF9630供應(yīng)商 更新時(shí)間2025-4-3 11:04:00

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