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IRF9Z14S中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF9Z14S
廠商型號(hào)

IRF9Z14S

功能描述

Power MOSFET

文件大小

2.45358 Mbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-13 0:45:00

IRF9Z14S規(guī)格書(shū)詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of is low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

The through-hole version (IRF9Z14L/SiHF9Z14L) is available for low-profile applications.

FEATURES

? Advanced Process Technology

? Surface Mount (IRF9Z14S/SiHF9Z14S)

? Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)

? 175 °C Operating Temperature

? Fast Switching

? P-Channel

? Fully Avalanche Rated

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號(hào):

    IRF9Z14S

  • 功能描述:

    MOSFET P-Chan 60V 6.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
VISHAY
2136+
TO-263
900
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IR
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80000
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Vishay(威世)
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20094
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ir
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500000
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IR
23+
D2-Pak
8600
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IR
TO-263
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ir
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N/A
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IR
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5587
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VISHAY
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73878
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