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IRFBG30PBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFBG30PBF規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
產(chǎn)品屬性
- 型號：
IRFBG30PBF
- 功能描述：
MOSFET 1000V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2016+ |
TO-220 |
3500 |
本公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價 | ||
TI |
23+ |
SOIC8 |
12000 |
全新原裝假一賠十 |
詢價 | ||
IR |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
VISHAY/威世 |
23+ |
NA/ |
20 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
VISHAY(威世) |
23+ |
N/A |
23500 |
最新到貨,只做原裝進(jìn)口 |
詢價 | ||
VISHAY |
23+ |
TO220 |
20540 |
保證進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價 | ||
VISHAY(威世) |
23+ |
TO220 |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價 | ||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY專營進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價 | ||
VISHAY |
22+ |
TO220 |
6000 |
原裝正品可支持驗貨,歡迎咨詢 |
詢價 |
