IRFD123中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書
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Description
These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
? 1.3A and 1.1A, 80V and 100V
? rDS(ON) = 0.30? and 0.04Ω
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFD123
- 功能描述：
MOSFET N-Chan 100V 1.3 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MOT |
2021+ |
DIP-4 |
6800 |
原廠原裝,歡迎咨詢 |
詢價 | ||
IR |
17+ |
DIP4 |
9700 |
只做全新進口原裝,現(xiàn)貨庫存 |
詢價 | ||
INTERRECT |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
IR |
17+ |
DIP4 |
60000 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
VISHAY |
23+/24+ |
DIP-4 |
15000 |
原裝進口、正品保障、合作持久 |
詢價 | ||
MOT |
23+ |
65480 |
詢價 | ||||
HAR |
2020+ |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | |||
IR |
2023+ |
HD-1 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
VISHAY |
23+24 |
DIP-4 |
29840 |
主營MOS管,二極.三極管,肖特基二極管.功率三極管 |
詢價 | ||
MOT |
92+ |
DIP-4 |
4 |
原裝 |
詢價 |
