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IRFD220

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=0.80A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD220

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD220

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllothesepowerMOSFETsaredesignedforapplicationssuchasswitchingr

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFD220

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD220

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD220_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD220PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD220PBF

HEXFET? Power MOSFET

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD220PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE220

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerst

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFD220

  • 功能描述：

    MOSFET N-Chan 200V 0.8 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
2020+
DIP-4
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
IR
24+
DIP-4
26900
只做原廠渠道 可追溯貨源
 詢價(jià)
IR
2021+
DIP-4
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
029+
DIP-4
316
只做原裝只有原裝深圳現(xiàn)貨
 詢價(jià)
IR
2015+
HEXDIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IR
23+
HEXDIP
19526
詢價(jià)
IR
23+
DIP
8000
全新原裝現(xiàn)貨
 詢價(jià)
MOT
05+
原廠原裝
4236
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IOR
24+
DIP-4P
340
詢價(jià)
更多IRFD220供應(yīng)商 更新時(shí)間2025-2-11 22:30:00

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