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IRFD9010

HEXFET? TRANSISTORS P-CHANNEL HEXDIP?

HEXFET?TRANSISTORSP-CHANNELHEXDIP? 1-WATTTRATEDPOWERMOSFETsINA4-PIN,DUAL-IN-LINEPACKAGE FEATURES ■ForAutomaticInsertion ■Compact,EndStackable ■FastSwitching ■LowDriveCurrent ■EasyParalleled ■ExcellentTemperatureStability ■P-ChannelVersatility

IRF

International Rectifier

IRFD9010

Power MOSFET

DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?ForAutomatic

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR9010

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010

P-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR9010

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010PBF

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010PBF

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010TRLPBFA

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010TRPBF

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    IRFD9010

  • 功能描述：

    MOSFET P-Chan 50V 1.1 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
DIP-4
8238
詢價
INTERNATIONA
05+
原廠原裝
4915
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
24+
HD-1
5000
詢價
IR
23+
DIP
5000
原裝正品,假一罰十
 詢價
進口原裝
23+
DIP-4
2000
特價庫存
 詢價
IR
1950+
DIP-4
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
VISHAY
1809+
DIP-4
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
21+
DIP-4
10000
原裝現(xiàn)貨假一罰十
 詢價
Vishay Siliconix
22+
4DIP
9000
原廠渠道,現(xiàn)貨配單
 詢價
Vishay Siliconix
21+
4DIP
13880
公司只售原裝,支持實單
 詢價
更多IRFD9010供應(yīng)商 更新時間2025-4-26 20:42:00

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