首頁(yè)>IRFD9020>規(guī)格書(shū)詳情

IRFD9020中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRFD9020
廠商型號(hào)

IRFD9020

功能描述

Power MOSFET

文件大小

264.3 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱(chēng)

Vishay威世科技

中文名稱(chēng)

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-4 0:10:00

人工找貨

IRFD9020價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

IRFD9020規(guī)格書(shū)詳情

FEATURES

? Dynamic dV/dt rating

? Repetitive avalanche rated

? For automatic insertion

? End stackable

? P-channel

? 175 °C operating temperature

? Fast switching

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provides the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost

effectiveness.?

The 4 pin DIP package is a low cost machine-insertable

case style which can be stacked in multiple combinations on

standard 0.1 pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up

to 1 W.

產(chǎn)品屬性

  • 型號(hào):

    IRFD9020

  • 功能描述:

    MOSFET P-Chan 60V 1.6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
23+
DIP-4
8238
詢(xún)價(jià)
IR
24+
NA/
4499
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
詢(xún)價(jià)
IR
24+
DIP-4
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢(xún)價(jià)
IR
01+
DIP-4
4503
詢(xún)價(jià)
IR
25+23+
DIP-4
27993
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢(xún)價(jià)
IR
22+
HD-1
8000
原裝正品支持實(shí)單
詢(xún)價(jià)
IR
24+
DIP-4
4503
只做原廠渠道 可追溯貨源
詢(xún)價(jià)
IOR
24+
DIP-4P
340
詢(xún)價(jià)
IRFD9020
9
9
詢(xún)價(jià)
IR
23
全新原裝 貨期兩周
詢(xún)價(jià)