IRFD9110中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRFD9110規(guī)格書詳情
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 0.7A, 100V
? rDS(ON) = 1.200?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
產(chǎn)品屬性
- 型號：
IRFD9110
- 功能描述：
MOSFET P-Chan 100V 0.7 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
23+ |
DIP-4 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
DIP |
8000 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
24+ |
DIP-4 |
2700 |
全新原裝自家現(xiàn)貨優(yōu)勢! |
詢價 | ||
IR |
2016+ |
DIP-4 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價 | ||
IR |
23+ |
DIP4 |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
06+ |
DIP-4 |
6000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Vishay Siliconix |
21+ |
4DIP |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IR |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | ||||
IR |
22+ |
HD-1 |
8000 |
原裝正品支持實單 |
詢價 |
