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IRFF640

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

IRFI640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFI640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFI640G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導體

IRFI640G

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=9.8A)

DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in

IRF

International Rectifier

IRFI640G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI640G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI640G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI640G

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconvert

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFI640GPBF

powermosfet

DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
CJ/長電
2022+
TO-220F
32500
原廠代理 終端免費提供樣品
 詢價
CJ/長電
23+
TO-220F
6000
原裝正品，支持實單
 詢價
CJ/長電
2022+
TO-220F
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
CJ/長電
20+
TO-220F
32500
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
只做原裝
24+
SOP-8L
36520
一級代理/放心采購
 詢價
IR
23+
SOP-8
7000
詢價
IR
22+
SOT-2595&NBS
4500
全新原裝品牌專營
 詢價
IOR
24+
SOP-8P
62
詢價
CJ/長電
23+
TO-220F
100000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IR
TO-39
40
普通
 詢價
更多IRFF640供應商 更新時間2025-2-21 14:00:00

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