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IRFR110TRRPBF

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFRU110A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU110

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU110

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseadvancedpowerMOSFETsaredesignedforuse

Intersil

Intersil Corporation

IRFU110

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU110

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU110

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU110A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU110A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFG110

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 100V 1A 14-Pin MO-036AB

  • 功能描述：

    TRANS MOSFET N-CH 100V 1A 14PIN MO-036AB - Bulk

  • 功能描述：

    Single N-Channel 100 V 1.4 W 15 nC Hexfet Power Mosfet Through Hole - MO-036AB

  • 功能描述：

    N CHANNEL MOSFET, 100V, MO-036AB; Transistor

  • Polarity：

    N Channel; Continuous Drain Current

  • Id：

    1A; Drain Source Voltage

  • Vds：

    100V; On Resistance

  • Rds(on)：

    700mohm; Rds(on) Test Voltage

  • Vgs：

    10V; Threshold Voltage Vgs

  • Typ：

    4V; No. of

  • Pins：

    14;RoHS

  • Compliant：

    No

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
65480
詢價(jià)
IR
24+
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
I&R
24+
長(zhǎng)期備有現(xiàn)貨
500000
行業(yè)低價(jià),代理渠道
 詢價(jià)
IR
10+
AUCDIP
235
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
IR
22+
CDIP
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
AUCDIP
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
AUCDIP
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
CDIP
7000
詢價(jià)
IR
20+
364
進(jìn)口原裝現(xiàn)貨,假一賠十
 詢價(jià)
更多IRFG110供應(yīng)商 更新時(shí)間2025-5-1 9:01:00

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