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IRFI520GPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFI520GPBF
廠商型號(hào)

IRFI520GPBF

功能描述

HEXFET Power MOSFET

文件大小

1.09848 Mbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-29 10:21:00

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IRFI520GPBF規(guī)格書詳情

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

● Isolated Package

● High Voltage Isolation = 2.5 kVRMS

● Sink to Lead Creepage Dist. = 4.8 mm

● 175 °C Operating Temperature

● Dynamic dV/dt Rating

● Low Thermal Resistance

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRFI520GPBF

  • 功能描述:

    MOSFET N-Chan 100V 7.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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