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IRFI840G

HEXFETPowerMOSFET(-55V,0.1ohm,-14A)

IRF

International Rectifier

IRFI840G

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.6A)

IRF1840G->CorrectPartumberIRFI840G 1.IsolatedPackage 2.HighVoltageIsolation=2.5VKRMS 3.SinktoLeadCreepageDist=4.8mm 4.LowThermalResistance

IRF

International Rectifier

IRFI840G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導體

IRFI840G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI840GLC

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.5A)

DESCRIPTION ThisnewseriesofLowChargePowerHEXFETsachievesignificantlylowergatechargeoverconventionalHEXFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFI840GLC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導體

IRFI840GLC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI840GLCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導體

IRFI840GLCPBF

HEXFETPowerMOSFET

DESCRIPTION ThisnewseriesofLowChargeHEXFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHEXFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Thesedeviceim

IRF

International Rectifier

IRFI840GLCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    IRFI840BTU

  • 功能描述:

    MOSFET 500V N-Channel B-FET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
I2PAK(TO-262)
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
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FSC
22+23+
TO-262
28381
絕對原裝正品全新進口深圳現(xiàn)貨
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FSC/ON
23+
原包裝原封 □□
73732
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
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FAIRCHILD/仙童
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FAIRCHILD/仙童
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FAIRCHILD/仙童
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
詢價
FAIRCHILD/仙童
2022
TO-262
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
仙童
TO-262
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
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仙童
05+
TO-262
996
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
FAIRCHILD/仙童
23+
NA/
4246
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
更多IRFI840BTU供應商 更新時間2025-2-20 16:12:00