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IRFL014NPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFL014NPBF規(guī)格書詳情
Description
Fifth Generation HEXFET? MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
● Surface Mount
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFL014NPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 160mOhms 7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
14+ |
SOT223 |
10 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon Technologies |
21+ |
TO2614 TO261AA |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IR |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
IR |
2021+ |
SOT-223 |
3500 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
24+ |
65230 |
詢價 | ||||
IR |
22+23+ |
SOT223 |
40894 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
24+ |
SOT-223 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
IR |
24+ |
SOT-223TO-261 |
1760 |
詢價 | |||
IR |
23+ |
SOT223 |
7750 |
全新原裝優(yōu)勢 |
詢價 |
