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IRFL1006PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFL1006PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
● Surface Mount
● Advanced Process Technology
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號:
IRFL1006PBF
- 功能描述:
MOSFET MOSFT 60V 2.3A 220mOhm 5.3nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
9000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
24+ |
SOT-223 |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
IR |
12+ |
SOT-223 |
18657 |
詢價 | |||
IR |
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
22+23+ |
SOT-223 |
28350 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
SOT223 |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
24+ |
SOT-223 |
18657 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
12+ |
SOT-223 |
18557 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+24 |
SOT-223 |
29840 |
主營MOS管,二極.三極管,肖特基二極管.功率三極管 |
詢價 | ||
IR |
22+23+ |
SOT-223 |
8000 |
新到現(xiàn)貨,只做原裝進口 |
詢價 |