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IRFL9110TR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導體

IRFL9110TRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導體

IRFL9110TRPBF

P-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRFL9110TRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFL9110TRPBF-BE3AB

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9110

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-3.1A)

DESCRIPTION ThirdGnerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtec

IRF

International Rectifier

IRFR9110

3.1A,100V,1.200Ohm,P-ChannelPowerMOSFETs

TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

IRFR9110

DynamicdV/dtRating

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數

  • 型號：

    IRFL9110TR

  • 功能描述：

    MOSFET P-Chan 100V 1.1 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
SOT-223
8700
新進庫存/原裝
 詢價
IR
23+
TO-220F
8238
詢價
IR
17+
SOT223
6200
100%原裝正品現貨
 詢價
IR
22+
SOT223
5000
全新原裝現貨!自家?guī)齑?
 詢價
IOR
24+
SOT223
2987
絕對全新原裝現貨供應!
 詢價
IR
23+
SOT223
8650
受權代理!全新原裝現貨特價熱賣!
 詢價
IR
24+
SOT223
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IR
22+
SOT-223
20000
只做原裝現貨
 詢價
VISHAY
1503+
SOT-223
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
1923+
SOT223
3000
絕對進口原裝現貨
 詢價
更多IRFL9110TR供應商 更新時間2025-4-29 10:50:00

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