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IRFN150中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFN150
廠商型號(hào)

IRFN150

功能描述

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A)

文件大小

217.14 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-21 15:26:00

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IRFN150規(guī)格書詳情

RDS(on) 0.07 ?

ID 34A

HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.

Features:

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Electrically Isolated

■ Surface Mount

■ Dynamic dv/dt Rating

■ Light-weight

產(chǎn)品屬性

  • 型號(hào):

    IRFN150

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 100V 34A 3-Pin SMD-1

  • 功能描述:

    TRANS MOSFET N-CH 100V 34A 3SMD-1 - Bulk

  • 功能描述:

    N CHANNEL MOSFET, 100V, 34A, SMD-1; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    34A; Drain Source Voltage

  • Vds:

    100V; On Resistance

  • Rds(on):

    60mohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V ;RoHS

  • Compliant:

    No

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