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IRFP064NPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP064NPBF

ULTRA LOW ON RESISTANCE

IRF

International Rectifier

IRFP064NPBF

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP064NPBF_15

ULTRA LOW ON RESISTANCE

IRF

International Rectifier

IRFP064PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP064PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

IRFP064PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP064PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP064V

PowerMOSFET(Vdss=60V,Rds(on)=5.5mohm,Id=130A??

VDSS=60V RDS(on)=5.5m? ID=130A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXF

IRF

International Rectifier

IRFP064VPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFP064NPBF

  • 功能描述：

    MOSFET MOSFT 55V 98A 8mOhm 113.3nCAC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-247
20540
保證進口原裝現(xiàn)貨假一賠十
 詢價
IR
2020+
TO-247
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
2020+
TO-247
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
IR
23+
TO-247
5878
進口原裝假一罰十特價銷售歡迎咨詢
 詢價
INFINEON/IR
1907+
NA
36275
20年老字號,原裝優(yōu)勢長期供貨
 詢價
IR
24+
TO-247
15000
全新原裝的現(xiàn)貨
 詢價
IR
15+
原廠原裝
97725
進口原裝現(xiàn)貨假一賠十
 詢價
IR
16+
TO-247
36000
原裝正品,優(yōu)勢庫存81
 詢價
IR
23+
TO-247AC
65400
詢價
INFINEON/英飛凌
2021+
TO-247
18379
原裝進口假一罰十
 詢價
更多IRFP064NPBF供應商 更新時間2025-2-11 18:52:00

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