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IRFP2907ZPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRFP2907ZPBF
廠商型號(hào)

IRFP2907ZPBF

功能描述

HEXFET Power MOSFET

文件大小

268.69 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-15 22:59:00

IRFP2907ZPBF規(guī)格書(shū)詳情

VDSS = 75V

RDS(on) = 4.5m?

ID = 90A

Description

Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRFP2907ZPBF

  • 功能描述:

    MOSFET MOSFT 75V 170A 4.5mOhm 180nC Qg

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
Infineon/英飛凌
21+
TO247
6000
原裝現(xiàn)貨正品
詢價(jià)
IR
23+
NA/
520
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
詢價(jià)
IR
2020+
TO247
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢價(jià)
IMF
22+23+
TO-247
8000
新到現(xiàn)貨,只做原裝進(jìn)口
詢價(jià)
INFINEON
20+
TO247
600
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
IR
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
2015+
TO247
450
普通
詢價(jià)
Infineon/英飛凌
23+
TO247
25000
原裝正品,假一賠十!
詢價(jià)
Infineon/英飛凌
23+
TO247
25630
原裝正品
詢價(jià)
IR
24+
65230
詢價(jià)